Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 6, 2008, Pages 1497-1500

  Achanta, Ravi S ^a   Plawsky, Joel L ^a   Gill, William N ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); COPPER; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FORECASTING; METAL IONS; NONLINEAR EQUATIONS; SILICON COMPOUNDS; SOLUBILITY; TERNARY SYSTEMS;

APPLIED ELECTRIC FIELDS; CONSISTENT VALUES; CONTINUITY EQUATIONS; COPPER IONS; CRITICAL VALUES; INDUCED ELECTRIC FIELDS; INTERNAL ELECTRIC FIELDS; ION SOLUBILITIES; MAXIMUM VALUES; PREDICTED TIMES;

IONS;

EID: 55349132711     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2998808     Document Type: Article

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