Breakdown of thin gate silicon dioxide films - A review

Microelectronics Reliability

Volumn 36, Issue 7-8 SPEC. ISS., 1996, Pages 871-905

  Nafria M ^a   Sune J ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; DEGRADATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MATERIALS TESTING; RELIABILITY; SILICA; STATISTICAL METHODS; STRESSES;

BREAKDOWN MODES; COMPUTER AIDED RELIABILITY TOOLS; DIELECTRIC BREAKDOWN; THIN GATE SILICON DIOXIDE FILMS;

THIN FILMS;

EID: 0030192752     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00023-6     Document Type: Review

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