Study of Cu contamination during copper integration for subquarter micron technology

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1015-1018

  Motte, P ^a   Torres, J ^b   Palleau, J ^b   Tardif, F ^c   Bernard, H ^a  

^a STMICROELECTRONICS   (Italy)

^b ORANGE LABS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CONTAMINATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON NITRIDE;

SUBQUARTER MICRON TECHNOLOGY; TOTAL X RAY REFLECTION FLUORESCENCE (TXRF);

COPPER;

EID: 0032628466     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00017-9     Document Type: Article

References (5)

1. Edelstein D, et al. Proc. IEEE IEDM 1997:773.
2. Venkatesan S, et al. Proc. IEEE IEDM 1997:769.
3. Marcadel C, et al. Proc. IEEE IEDM 1997:405.
4. Labiadh A., et al. Proc E-MRS Symp J. 66:1996;369.
5. Tardif F., et al. Proc E-MRS Symp J. 66:1996;195.