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Applied Physics A: Materials Science and Processing

Volumn 74, Issue 3, 2002, Pages 423-432

A model for growth directional features in silicon nanowires

(3) Tan, T Y a Lee, S T b Gosele U c

a Duke University (United States)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; GROWTH (MATERIALS); LASER ABLATION; MATHEMATICAL MODELS; MOLECULAR ORIENTATION; OXYGEN; SILICON;

SILICON NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0036501755 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390101133 Document Type: Article

Times cited : (43)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.