The effect of microstructure on resistivity and reliability in copper interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2008, Pages 641-651

  Gignac, Lynne M ^a   Hu, C K ^a   Herbst, Brian ^b   Baker O'Neal, Brett C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AREA MEASUREMENTS; BOUNDARY DIFFUSIONS; COPPER INTERCONNECTS; CU INTERCONNECTS; CU LINES; DIFFUSION PATHS; DIRECT MEASUREMENTS; ELECTROMIGRATION TESTING; GRAIN DIAMETERS; GRAIN SIZES; INTER-CONNECTS; LIFE-TIMES; LINE DIMENSIONS; LINE RESISTIVITIES; LINE WIDTHS; MEAN FREE PATHS; NO ANNEAL; PROJECTION ERRORS; REMAINED CONSTANTS; RESISTIVITY VALUES; SURFACE SCATTERINGS; TCR METHODS; TEMPERATURE COEFFICIENT OF RESISTANCES;

ACTIVATION ENERGY; CRYSTAL GROWTH; ELECTRIC REACTORS; ELECTROMIGRATION; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLIZING; MICROSTRUCTURE; OPTICAL INTERCONNECTS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY OF SOLIDS;

COPPER;

EID: 55349093933     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)

1. T. S. Kuan, C. K. Inoki, G.S. Oehrlein, K. Rose, Y.-P. Zhoa, G. C. Wang, S.M. Rossnagel, and C. Cabral, Mat. Res. Soc. Proc. 612 (MRS, Pittsburgh, PA, 2000) D7.1.
2. W. Steinhögl, G. Schindler, G. Steinlesberger, and M. Engelhardt, Phys. Rev. B 66, 075414 (2002).
3. G. Steinlesberger, M. Engelhardt, G. Schindler, W. Steinhogl, A. Von Glasow, K. Mosig, and E. Bertagnolli, Microelectronic Eng. 64, 409 (2002).
4. W. Wu, R. Jonckheere, Z. Tokei, M. Stuchi, H. Struyf, I. Vos, H. Bender, and K. Maex, Proc. 2002 Ad. Metal. Conf. (Mat. Res. Soc., Warrendale, PA, 2003) 345.
5. C.-U. Kim, J. Park, N. Michael, P. Gillespie, R. Augur, J. Electron. Mater. 32, 982 (2003).
6. W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, J. Appl. Phys. 97, 023706 (2005).
7. G. Schindler, V. Klandzevski, G. Steinlesberger, W. Steinhögl, M. Traving, and M. Engelhardt, Proc. 2003 Adv. Metall. Conf. (MRS, Warrendale, PA, 2004), 213.
8. W.F.A. Bessling, M. Broekaart, V. Arnal, and J. Torres, Microelectr. Eng. 76, 167 (2004).
9. W. Wu, S. H. Brongersma, M. Van Hove, K. Maex, Appl. Phys. Let. 84, 2838 (2004).
10. J. J. Plombon, E. Andideh, V. M. Dubin, J. Maiz, Appl. Phys. Let. 89, 113124 (2006).
11. W. Zhang, S. H. Brongersma, Z. Li, D. Li, O. Richard, K. Maex, J. Appl. Phys. 101, 063703 (2007).
12. L. A. Giannuzzi, J. L. Drown, S. R. Brown, R. B. Irwin, and F. A. Stevie, Mater. Res. Soc. Proc., 480, (MRS, Warrendale, PA, 1997) 19.
13. Scion Image software (www.scioncorp.com) for PC is based on NIH Image for Macintosh, W. Rasband, U.S. National Institutes of Health, public domain software.
14. K. Hinode, Y. Hanaoka, K. Takeda, and S. Kondo, Jpn. J. Appl. Phys. 40, L1097 (2001).
15. nd Ed., Coordinating Editor D. E. Gray (McGraw-Hill Book Co., New York 1963) p. 9-42.
16. th Ed., edited by D. R. Lide, (CRC Press, Taylor & Francis Group, Boca Raton, FL, 2006) p. 12-39.
17. th Ed. (John Willey & Sons, Inc, New York 1971) p. 259.
18. International Technology Roadmap for Semiconductors (TTRS), 2005, http://www.itrs.net/Links/2005ITRS /Home2005.htm.
19. D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, J. Slattery, IEEE Proc. EEDM Technical Digest (IEEE, Piscataway, NJ, 1997) 773.
20. R. G. Chambers, Proc. Roy. Soc. Ser. A 202, 378 (1950).
21. K. Fuchs, Proc. Cambridge Philos. Soc. 34, 100 (1938).
22. E. H. Sondheimer, Adv. Phys. 1, 1 (1952).
23. W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, Proc. 2003 IEEE Conf. on Simulations of Semicond. Proc. and Dev., (IEEE, Piscataway, NJ, 2003) 27.
24. D. T. Carpenter, J. R. Codner, K. Barmak, and J. M. Rickman, Mat. Let., 41, 296 (1999).
25. J. M. E. Harper, C. Cabral Jr., P. Andricacos, L. M. Gignac, I. Noyan, K. Rodbell and C. Hu, J. Appl. Phys., 86, 2516 (1999).
26. L. M. Gignac, K. P. Rodbell, C. Cabral, Jr., P. C. Andricacos, P. M. Rice, R. B. Beyers, P. S. Locke, S. J. Klepeis, Proc. Mat. Res. Soc. 562 (MRS, Warrendale, PA, 1999) 209.
27. W. W. Mullins, J. Appl. Phys. 28, 333 (1957).
28. A. H. King, R. Mangat, and K. Owusu-Boahen, Proc. Mat. Res. Soc., 614 (MRS, Warrendale, PA, 2000) G.7.8.1/D10.8.1.
29. H. Stegman, H.-J. Engelmann, and E. Zschech, Microelectron. Eng. 65, 171 (2003).
30. P. Ercius, M. Weyland, D.A. Muller, L. M. Gignac, Appl. Phys. Let. 88, 243116 (2006).
31. D. A. Muller and P. A. Ercius, private communication.
32. th Int. Work, on Stress-Induced Phenomena in Metal., (AIP, Melville, NY), in print.
33. T. Surholt, Y. M. Mishin, and C. Herzig, Phys. Rev. B50, 3577 (1994).
34. T. Surholt and C. Herzig, Acta Mater. 45, 3817(1997).