Line resistance behaviour in narrow lines patterned by a TiN hard mask spacer for 45 nm node interconnects

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 167-174

  Besling, W F A ^a   Broekaart, M ^a   Arnal, V ^b   Torres, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Electron scattering; Interconnect; Line resistance; Narrow line patterning; Porous low k; Resistivity

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OPTICAL INTERCONNECTS; POROUS MATERIALS; TITANIUM NITRIDE;

BARRIER THICKNESS; LINE RESISTANCE; NARROW LINE PATTERNING; SPECIFIC RESISTIVITY;

MASKS;

EID: 4544367890     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.046     Document Type: Conference Paper

References (8)

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