Ab initio pseudopotential studies of the pressure dependences of structural, electronic and optical properties for GaN

Solid State Communications

Volumn 138, Issue 10-11, 2006, Pages 494-497

  Gao, G Y ^a   Yao, K L ^a,b   Liu, Z L ^a   Li, Y L ^a   Li, Y C ^a   Liu, Q M ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

A. Semiconductors; C. Electronic structure; D. Optical properties; D. Phase transition

Indexed keywords

ELECTRIC PROPERTIES; LATTICE CONSTANTS; OPTICAL PROPERTIES; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION;

AB INITIO PLANE-WAVE; AMBIENT PRESSURE; EXCHANGE-CORRELATION;

GALLIUM NITRIDE;

EID: 33744514289     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.04.028     Document Type: Article

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