Studies on leakage mechanisms and electrical properties of doped BiFe O3 films

Electrochemical and Solid-State Letters

Volumn 10, Issue 8, 2007, Pages

  Lee, Chia Ching ^a   Wu, Jenn Ming ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DOPING (ADDITIVES); FERROELECTRICITY; GRAIN BOUNDARIES; LEAKAGE CURRENTS; SEMICONDUCTING BISMUTH COMPOUNDS; SURFACE MORPHOLOGY; TITANIUM;

BFO; BISMUTH FERRITE; DEEP TRAPS; RELAXATION GAPS;

THIN FILMS;

EID: 34250334727     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2745123     Document Type: Article

References (19)

1. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science, 299, 1719 (2003).
2. F. Kubel and H. Schmid, Acta Crystallogr., 46, 698 (1990).
3. Y. Arimoto and H. Ishiwara, MRS Bull., 29, 823 (2004).
4. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett., 86, 062903 (2005).
5. D. Lee, M. G. Kim, S. Ryu, and H. M. Jang, Appl. Phys. Lett., 86, 222903 (2005).
6. H. Uchida, R. Ueno, H. Nakaki, H. Funakubo, and S. Koda, Jpn. J. Appl. Phys., Part 1, 44, L561 (2005).
7. C. F. Chung, J. P. Lin, and J. M. Wu, Appl. Phys. Lett., 88, 242909 (2006).
8. Y. H. Lee, C. C. Lee, Z. X. Liu, C. S. Liang, and J. M, Electrochem. Solid-State Lett., 9, F38 (2006).
9. Y. P. Wang, L. Zhou, M. F. Zhang, X. Y. Chen, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett., 84, 1731 (2004).
10. S. K. Singh and H. Ishiwara, Jpn. J. Appl. Phys., Part 1, 44, L734 (2005).
11. Y. H. Lee, J. M. Wu, and C. H. Lai, Appl. Phys. Lett., 88, 042903 (2006).
12. S. Yakovlev, J. Zekonyte, C. H. Solterbeck, and M. Es-Souni, Thin Solid Films, 493, 24 (2005).
13. J. A. Kerr and D. W. Stocker, in Handbook of Chemistry and Physics, 83rd ed., D. R. Lide, Editor, p. 9, CRC Press LLC, Boca Raton, FL (2002).
14. H. Hu and S. B. Krupanidhi, J. Mater. Res., 9, 1484 (1994).
15. S. Y. Wang, B. L. Cheng, Can Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett., 84, 4116 (2004).
16. J. P. Rivera and H. Schmid, Ferroelectrics, 204, 23 (1997).
17. S. Iakovlev, C. H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys., 97, 094901 (2005).
18. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys., 100, 014106 (2006).
19. J. G. Yoon, B. S. Kang, J. D. Kim, T. W. Noh, T. K. Song, Y. K. Lee, and J. K. Lee, Integr. Ferroelectr., 53, 401 (2003).