Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templates

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Soh, C B ^a   Chow, S Y ^a   Tan, L Y ^b   Hartono, H ^b   Liu, W ^a   Chua, S J ^a,b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

CARRIER LOCALIZATIONS; DISLOCATION ANNIHILATIONS; ENHANCED LUMINESCENCES; HETEROSTRUCTURES; INDIUM ATOMS; INDIUM SEGREGATIONS; LUMINESCENCE EFFICIENCIES; MULTIPLE QUANTUM WELLS; NANOPOROUS GAN; NONRADIATIVE RECOMBINATIONS; NUCLEATION SITES; QUANTUM WELLS; STEP EDGES; STRAIN RELAXED;

QUANTUM EFFICIENCY;

EID: 55149122041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005409     Document Type: Article

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