Anomalous optical transitions in AlInGaN/GaN heterostructures grown by metalorganic chemical vapor deposition

Solid State Communications

Volumn 136, Issue 7, 2005, Pages 421-426

  Soh, C B ^a   Chua, S J ^a   Liu, W ^a   Lai, M Y ^a   Tripathy, S ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

A. AlInGaN; A. GaN; D. Excitonic transitions; D. Free carrier recombination; E. Photoluminescence

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

EMISSION INTENSITY; EXCITONIC TRANSITIONS; FREE CARRIER RECOMBINATION; LOCALIZED STATES;

HETEROJUNCTIONS;

EID: 27344457769     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2005.07.033     Document Type: Article

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