Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga2O3 film prepared by rheotaxial growth and thermal oxidation

Journal of Materials Research

Volumn 19, Issue 4, 2004, Pages 1105-1117

  Chen, Chin Cheng ^a   Chen, Chiu Chen ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM COMPOUNDS; GRAIN SIZE AND SHAPE; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; THERMOOXIDATION; TITANIUM;

GALLIUM OXIDES; RHEOTAXIAL GROWTH;

THIN FILMS;

EID: 2342583366     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0144     Document Type: Article

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