Effect of annealing temperature on structural transformation of gallium based nanocrystalline oxide thin films and their optical properties

Optical Materials

Volumn 29, Issue 6, 2007, Pages 718-722

  Sinha, Godhuli ^a   Adhikary, Kalyan ^a   Chaudhuri, Subhadra ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Alpha and beta gallium oxide; Band gap; Phase transition; Semiconducting thin films; Urbach tail width

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ENERGY GAP; GALLIUM; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHASE TRANSITIONS;

OPTICAL BAND GAPS; SEMICONDUCTING THIN FILMS; TRANSMITTANCE SPECTRA; URBACH TAIL WIDTH;

THIN FILMS;

EID: 33845945900     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.12.002     Document Type: Article

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