Effects of electron-cyclotron-resonance oxygen plasma irradiation on properties of insulator/Ge-semiconductor interfaces prior to germanium nitride formation

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7553-7555

  Otani, Yohei ^a   Fukuda, Yukio ^a   Sato, Tetsuya ^b   Nakagawa, Kiyokazu ^b   Toyota, Hiroshi ^c   Ono, Toshiro ^c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

^c HIROSAKI UNIVERSITY   (Japan)

Author keywords

ECR; Ge MIS; GeNx; Nitrogen plasma; Oxygen plasma; Room temperature deposition

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CYCLOTRONS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; ELECTRON IRRADIATION; GERMANIUM; IRRADIATION; NITRIDES; NONMETALS; OXYGEN; PLASMA DEPOSITION; PLASMAS; RESONANCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SPUTTER DEPOSITION; SWITCHING CIRCUITS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SUBSTRATES;

ECR; GE-MIS; GENX; NITROGEN PLASMA; OXYGEN PLASMA; ROOM-TEMPERATURE DEPOSITION;

SUBSTRATES; SEMICONDUCTING GERMANIUM;

EID: 55149084173     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7553     Document Type: Article

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