Electrical analyses of Germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/Germanium interface at room temperature

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2878-2883

  Fukuda, Yukio ^a   Otani, Yohei ^a   Itayama, Yasuhiro ^a   Ono, Toshiro ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b HIROSAKI UNIVERSITY   (Japan)

Author keywords

Capacitance technique; Conductance technique; Diffusion conductance; Germanium (Ge); Interface trap; Intrinsic carrier density; MIS capacitor

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC CONDUCTANCE; EQUIVALENT CIRCUITS; SEMICONDUCTING GERMANIUM; SUBSTRATES;

CAPACITANCE TECHNIQUE; CONDUCTANCE TECHNIQUE; DIFFUSION CONDUCTANCE; INTRINSIC CARRIER DENSITY; MIS CAPACITOR;

MIS DEVICES;

EID: 36248937753     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907111     Document Type: Article

References (11)

1. H. Shang, H. Okorn-Schimdt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H.-S. P. Wong, and W. Hanesch, "Electrical characterization of germanium p-channel MOSFETs," IEEE Electron Device Lett., vol. 24, no. 4, pp. 242-244, Apr. 2003.
2. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "A sub-400 °C germanium MOSFET technology with high-κ dielectric and metal gate, in IEDM Tech. Dig., 2002, pp. 437-440.
3. 3-Ge-on-insulator n- and p-MOSFETs with fully the NiSi and NiGe dual gates," IEEE Electron Device Lett., vol. 25, no. 3, pp. 138-140, Mar. 2004.
4. 2 gate dielectrics and TaN gate electrode," in IEDM Tech. Dig., 2003, pp. 433-436.
5. W. P. Bai, N. Lu, A. Ritenour, M. L. Lee, D. A. Antoniadis, and D.-L. Kwong, "Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate," IEEE Electron Device Lett., vol. 27, no. 3, pp. 175-178, Mar. 2006.
6. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982.
7. S.M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
8. Y. Fukuda, T. Ueno, and S. Hirono, "Electrical behavior of germanium oxide/germanium interface prepared by electron-cyclotron-resonance plasma oxidation in capacitance and conductance measurements," Jpn. J. Appl. Phys., vol. 44, no. 11, pp. 7928-7930, 2005.
9. Y. Fukuda, T. Ueno, S. Hirono, and S. Hashimoto, "Electrical characterization of germanium oxide/germanium interface prepared by electroncyclotron-resonance plasma irradiation," Jpn. J. Appl. Phys. vol. 44, no. 9B, pp. 6981-6984, 2005.
10. K. Saito, Y. Jin, T. Ono, and M. Shimada, "Low-temperature silicon oxidation with very small activation energy and high-quality interface by electron cyclotron resonance plasma stream irradiation," Jpn. J. Appl. Phys., vol. 43, no. 6B, pp. 1,765-1-767, 2004.
11. T. Ono, H. Nishimura, M. Shimada, and S. Matsuo, "Electron cyclotron resonance plasma source for conductive film deposition," J. Vac. Sci. Technol. A. Vac. Surf. Films, vol. 12, no. 4, pp. 1281-1286, Jul. 1994.