A thin-film solar cell of high-quality β-FeSi2/Si heterojunction prepared by sputtering

Solar Energy Materials and Solar Cells

Volumn 90, Issue 3, 2006, Pages 276-282

  Liu, Zhengxin ^a   Wang, Shinan ^a,b   Otogawa, Naotaka ^a   Suzuki, Yasuhito ^a,c   Osamura, Masato ^a   Fukuzawa, Yasuhiro ^a   Ootsuka, Teruhisa ^a   Nakayama, Yasuhiko ^a   Tanoue, Hisao ^a   Makita, Yunosuke ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CANON INC   (Japan)

^c FiBest Limited   (Japan)

Author keywords

Heterojunction; Iron silicide; Solar cell; Sputtering; Template

Indexed keywords

EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTIONS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS;

BUFFER LAYER; ENERGY CONVERSION EFFICIENCY; IRON SILICIDE; TEMPLATE;

SOLAR CELLS;

EID: 28244449272     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.03.014     Document Type: Article

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