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Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4385-4391

Design of bulk fin-type field-effect transistor considering gate work-function

(4) Han, Kyoung Rok a Choi, Byung Kil a Kwon, Hyuck In b Lee, Jong Ho a

a Kyungpook National University (South Korea)

b Daegu University (South Korea)

Author keywords

Bulk FinFET; Corner effect; Short channel effect; Triple gate; Work function

Indexed keywords

CONCENTRATION (PROCESS); FINS (HEAT EXCHANGE); LEAKAGE CURRENTS; LITHIUM BATTERIES; MOSFET DEVICES; PROBABILITY DENSITY FUNCTION; THREE DIMENSIONAL; THRESHOLD VOLTAGE; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

BULK FINFET; CORNER EFFECT; SHORT CHANNEL EFFECT; TRIPLE-GATE; WORK-FUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 55049130488 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.4385 Document Type: Article

Times cited : (9)

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