MOSFETs with biased spacer having different work-function from the gate

Journal of the Korean Physical Society

Volumn 45, Issue 4, 2004, Pages 1093-1097

  Kim, Junsoo ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a   Shin, Hyungcheol ^a   Han, Sangyeon ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Biased spacer; Extended source drain; Induced inversion layer; Short channel effect

Indexed keywords

EID: 8644284243     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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