Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film/native Si oxide/p-Si structure

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3815-3817

  Wang, Y Q ^a   Zhao, T P ^a   Liu, J ^a   Qin, G G ^a,b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0032606314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124189     Document Type: Article

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