Improvement on reliability properties of metal-ferroelectric (BiFeO 3) -insulator (HfO2) -semiconductor structures fabricated by oxygen-incorporated magnetron sputtering

Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

  Juan, Trevor Pi Chun ^a   Lu, Jong Hong ^a   Lu, Ming Wei ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BISMUTH; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; FERROELECTRIC MATERIALS; FERROELECTRICITY; HAFNIUM; HAFNIUM COMPOUNDS; IRON COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

FERROELECTRIC LAYERS; HAFNIUM OXIDES; INSULATOR LAYERS; MEMORY WINDOWS; RELIABILITY PROPERTIES; RICH CONDITIONS; SEMICONDUCTOR STRUCTURES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

OXYGEN VACANCIES;

EID: 54949100811     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2994630     Document Type: Article

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