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Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

Conduction mechanisms of Ta/Porous SiCOH films under electrical bias

(6) Ou, Ya a Wang, Pei I a He, Ming a Lu, T M a Leung, Pak b Spooner, Terry A c

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b FREESCALE SEMICONDUCTOR INC (United States)

c IBM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC EQUIPMENT; ELECTRIC NETWORK ANALYSIS; ELECTRODES; ELECTROLYSIS; HEAT CONDUCTION; IONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING INDIUM; TANTALUM;

CAPACITANCE-VOLTAGE; CONDUCTION MECHANISMS; CU ELECTRODES; ELECTRICAL BIASSED; ELECTRICAL CHARACTERISTICS; FLATBAND VOLTAGE SHIFTS; ION DRIFTS; POOLE-FRENKEL CONDUCTIONS; SEMICONDUCTOR CAPACITORS; SICOH FILMS; TEMPERATURE STRESSES; VOLTAGE RAMPS;

ELECTROLYTIC CAPACITORS;

EID: 54949085481 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2992125 Document Type: Article

Times cited : (29)

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