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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1157-1161

Fabrication and electrical properties of ultra-thin silicon nanowires

(5) Rochdi, N a Tonneau, D a Jandard, F a Dallaporta, H a Safarov, V a

a AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCES; ELECTRICAL MEASUREMENTS; ELECTRICAL PROPERTIES; ELECTRON TRANSPORTS; HIGH SENSITIVITIES; INSULATOR LAYERS; INTERFACE STATES; SILICON NANOWIRES; SILICON-ON-INSULATOR; THIN WIRES;

CHARGE TRAPPING; ELECTRIC PROPERTIES; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON;

ELECTRIC WIRE;

EID: 54849421173 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200723484 Document Type: Article

Times cited : (18)

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