SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 989-993

Coulomb-blockade-structures in poly-crystalline silicon

(4) Neu, W a Augke, R a Prins, F E a Kern, D P a

a UNIVERSITY OF TÜBINGEN (Germany)

Author keywords

Coulomb blockade; Electron beam lithography; Single electron transistor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; GRAIN BOUNDARIES; MOSFET DEVICES; SILICON;

SINGLE ELECTRON TRANSISTORS;

POLYCRYSTALLINE MATERIALS;

EID: 19244369857 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(01)00429-4 Document Type: Article

Times cited : (3)

References (12)

1
- 0003285518
- Single charge tunneling
- Plenum Publishing Corporation, New York
- (1992) NATO ASI Series, Series B: Physics , vol.294
- Grabert, H.¹ Devoret, M.H.²

2
- 0001630171
- (1987) Phys. Rev. Lett. , vol.59 , pp. 109
- Fulton, T.A.¹ Dolan, G.J.²

3
- 11944259150
- (1990) Phys. Rev. Lett. , vol.65 , pp. 771
- Meirav, U.¹ Kastner, M.A.² Wind, S.J.³

4
- 21544483058
- (1995) Appl. Phys. Lett. , vol.67 , pp. 938
- Leobandung, E.¹ Guo, L.² Chou, S.Y.³

5
- 0001707398
- (1997) J. Appl. Phys. , vol.81 , pp. 2699
- Smith, R.A.¹ Ahmed, H.²

6
- 0000992381
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2065
- Augke, R.¹ Eberhardt, W.² Single, C.³ Prins, F.E.⁴ Wharam, D.A.⁵ Kern, D.P.⁶

7
- 0001264032
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1113
- Irvine, A.C.¹ Durrani, Z.A.K.² Ahmed, H.³ Biesemans, S.⁴

8
- 84995570498
- (1993) IEDM Techn. Digest , vol.541
- Yano, K.¹ Ishii, T.² Hashimoto, T.³ Kobayashi, T.⁴ Murai, F.⁵ Seki, K.⁶

9
- 0000605624
- (2000) J. Appl. Phys. , vol.87 , pp. 4580
- Heidemeyer, H.¹ Single, C.² Zhou, F.³ Prins, F.E.⁴ Kern, D.P.⁵ Plies, E.⁶

10
- 0033313440
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 1165
- Single, C.¹ Augke, R.² Prins, F.E.³ Kern, D.P.⁴

11
- 0018032498
- (1982) J. Appl. Phys. , vol.49 , pp. 5565
- Baccarani, G.¹ Ricco, B.² Spadini, G.³

12
- 0020721631
- (1983) IEEE Trans. Electron Dev. , vol.30 , pp. 197
- Colinge, J.-P.¹ Morel, H.² Chante, J.-P.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.