High-program/erase-speed SONOS with in situ silicon nanocrystals

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1148-1151

  Chiang, Tsung Yu ^a   Chao, Tien Sheng ^a   Wu Yi Hong, Y H ^b   Yang, Wen Luh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Memory window; Nonvolatile memory; Retention time; Silicon nanocrystals (Si NC)

Indexed keywords

DATA STORAGE EQUIPMENT; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NITRIDES; NONMETALS; OPTICAL WAVEGUIDES; SILICON NITRIDE; SPEED;

MEMORY WINDOW; NONVOLATILE MEMORY; RETENTION TIME; SILICON NANOCRYSTALS (SI-NC);

SILICON;

EID: 54849374700     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2002944     Document Type: Article

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