Strain characterization of strained silicon on insulator including the effects of rotational misalignment

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Zoo, Yeongseok ^a   Theodore, N D ^b   Alford, T L ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COEFFICIENTS OF THERMAL EXPANSIONS; DIRECT MEASUREMENT; HIGH RESOLUTION XRAY DIFFRACTION (XRD); ROTATIONAL MISALIGNMENTS; STRAIN CHARACTERIZATION; STRAIN COMPONENTS; STRAINED SILICON ON INSULATOR; THERMALLY GROWN OXIDE;

ALIGNMENT; SILICON; THERMAL EXPANSION; X RAY DIFFRACTION;

STRAIN;

EID: 54749084585     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801001     Document Type: Article

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