In-plane strain distribution in the surface region of thin silicon overlayers on insulator

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Omi, Hiroo ^a   Kawamura, Tomoaki ^a   Fujikawa, Seiji ^b   Tsusaka, Yoshiyuki ^b   Kagoshima, Yasushi ^b   Matsui, Junji ^c  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

^c Center for Advanced Science and Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GONIOMETERS; OXIDATION; OXYGEN; REFLECTION; WSI CIRCUITS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; SILICON NANO-OVERLAYER; STRAIN DISTRIBUTION; THIN SILICON OVERLAYERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 22244491655     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977208     Document Type: Article

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