Stacking faults and their strain effect at the Si/SiO2 interfaces of a directly bonded SOI (silicon on insulator)

Thin Solid Films

Volumn 346, Issue 1, 1999, Pages 169-173

  Shin, Dong Woon ^a   Choi, Doo Jin ^a   Kim, Geung Ho ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); SILICA; SILICON; SINGLE CRYSTALS; STACKING FAULTS; STRAIN; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

BONDING INTERFACE; CONVERGENT BEAM ELECTRON DIFFRACTION; OXIDATION INTERFACE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033149168     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01468-0     Document Type: Article

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