Precise measurement of strain induced by local oxidation in thin silicon layers of silicon-on-insulator structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1282-1284

  Kimura, Shigeru ^a   Ogura, Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Local oxidation of silicon; Plasma assisted chemical etching; Silicon on insulator; Strain; X ray diffraction

Indexed keywords

EID: 0001154710     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1282     Document Type: Article

References (10)

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