Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 22-23

  Kencke, D L ^a   Chen, W ^a   Wang, H ^a   Mudanai, S ^a   Ouyang, Q ^a   Tasch, A ^a   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING SILICON;

FRINGING-INDUCED BARRIER LOWERING (FIBL); FRINGING-INDUCED BARRIER SHIELDING (FIBS); ZERO-BIAS INTERNAL BARRIER LOWERING (ZIBL);

MOSFET DEVICES;

EID: 0033361786     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)