Comparison of FIB-CVD and EB-CVD growth characteristics

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1225-1228

  Igaki, Jun ya ^a,b   Kanda, Kazuhiro ^a,b   Haruyama, Yuichi ^a,b   Ishida, Masahiko ^b,c   Ochiai, Yukinori ^b,c   Fujita, Jun ichi ^b,d   Kaito, Takashi ^e   Matsui, Shinji ^a,b  

^a UNIVERSITY OF HYOGO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NEC CORPORATION   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e SII NANOTECHNOLOGY INC   (Japan)

Author keywords

Electrical property; Electron beam chemical vapor deposition; Focused ion beam chemical vapor deposition; Growth characteristics; Three dimensional

Indexed keywords

AMORPHOUS MATERIALS; CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; ELECTRON BEAMS; GALLIUM; GROWTH (MATERIALS); SCANNING ELECTRON MICROSCOPY;

ELECTRICAL PROPERTY; ELECTRON BEAM CHEMICAL VAPOR DEPOSITION; FOCUSED ION BEAM CHEMICAL VAPOR DEPOSITION; GROWTH CHARACTERISTICS;

ION BEAMS;

EID: 33748273924     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.105     Document Type: Article

References (6)

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