Homoepitaxial deposition of high-quality thick diamond films: Effect of growth parameters

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 249-254

  Tallaire, A ^a   Achard, J ^a   Silva, F ^a   Sussmann, R S ^a,b   Gicquel, A ^a  

^a UNIVERSITÉ PARIS 13   (France)

^b KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Defect characterization; Morphology; Single crystal growth; Synthetic diamond

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; EPITAXIAL GROWTH; MORPHOLOGY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SINGLE CRYSTALS; SYNTHETIC DIAMONDS; THICK FILMS;

DEFECT CHRACTERIZATION; GROWTH PARAMETERS; HOMOEPITAXIAL DEPOSITION; SINGLE CRYSTAL GROWTH;

DIAMOND FILMS;

EID: 18544384117     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.037     Document Type: Conference Paper

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