The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 B, 2001, Pages

  Leem, Shi Jong ^a,b   Kim, Min Hong ^a   Shin, Johngoen ^a   Choi, Yoonho ^a   Jeong, Jichai ^b  

^a LG Electronics Inc   (South Korea)

^b Korea University   (South Korea)

Author keywords

Growth interruption; InGaN quantum well; MOCVD; Pre In flow

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

DOUBLE CRYSTAL X-RAY DIFFRACTION (DCXRD); GROWTH INTERRUPTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035870378     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l371     Document Type: Article

References (14)