High mobility single crystalline ScN and single-orientation epitaxial YN on sapphire via magnetron sputtering

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Gregoire, John M ^a   Kirby, Steven D ^a   Scopelianos, George E ^a   Lee, Felix H ^a   Van Dover, R Bruce ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL PROPERTIES; CONCENTRATION (PROCESS); CORUNDUM; CRYSTALLINE MATERIALS; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; EPITAXIAL FILMS; FILMS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; MATERIALS PROPERTIES; MECHANICAL PROPERTIES; NITRIDES; OZONE WATER TREATMENT; STOICHIOMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ATOMIC FORCES; DEPOSITION GEOMETRIES; EPITAXIAL RELATIONS; FILM STRUCTURES; GAS PRESSURES; GROWTH METHODS; HALL EFFECT MEASUREMENTS; HIGH MOBILITIES; LANTHANOID; OPTIMAL CONDITIONS; OPTIMAL VALUES; OPTIMIZING; POTENTIAL APPLICATIONS; RESEARCH ACTIVITIES; SPUTTER GASSES; SUBSTRATE TEMPERATURES; X-RAY DIFFRACTIONS;

CARRIER MOBILITY;

EID: 54049103605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2996006     Document Type: Article

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