Molecular beam epitaxial growth of atomically smooth scandium nitride films

Applied Physics Letters

Volumn 77, Issue 16, 2000, Pages 2485-2487

  Al Brithen, Hamad ^a   Smith, Arthur R ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000489821     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1318227     Document Type: Article

References (12)

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10. Whether or not ScN also has an indirect band gap at lower energy is currently an issue under investigation.
11. W. Lengauer and P. Ettmayer, J. Less-Common Met. 168, L7 (1991).
12. We calibrated the z scale of our STM by measuring single steps heights on GaN(0001̄) grown on sapphire, which are known to have a height of 2.59 Å.