Microstructure of epitaxial scandium nitride films grown on silicon

Applied Surface Science

Volumn 252, Issue 24, 2006, Pages 8385-8387

  Moram, M A ^a   Joyce, T B ^b   Chalker, P R ^b   Barber, Z H ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Microstructure; Molecular beam epitaxy; Scandium nitride; Silicon; Thin film; X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SILICON; THERMODYNAMIC PROPERTIES; THIN FILMS; X RAY DIFFRACTION;

REACTIVE NITROGEN SOURCE; SCANDIUM NITRIDES;

SCANDIUM COMPOUNDS;

EID: 33748972620     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.11.069     Document Type: Article

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