Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy

Journal of Applied Physics

Volumn 96, Issue 7, 2004, Pages 3787-3792

  Al Brithen, Hamad A ^a   Yang, Haiqiang ^a   Smith, Arthur R ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; ANTIFERROMAGNETIC BEHAVIOR; FACE-CENTERED TETRAGONAL (FCT) STRUCTURE; RADIO FREQUENCY MOLECULAR BEAM EPITAXY (RF MBE);

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DESORPTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POSITIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANDIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

MANGANESE;

EID: 7044284922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788842     Document Type: Article

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