A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 11, 2002, Pages 1493-1501

  Imamiya, Kenichi ^a   Nakamura, Hiroshi ^a   Himeno, Toshihiko ^a   Yamamura, Toshio ^a   Ikehashi, Tamio ^a   Takeuchi, Ken ^a   Kanda, Kazushige ^a   Hosono, Koji ^a   Futatsuyama, Takuya ^a   Kawai, Koichi ^a   Shirota, Riichiro ^a   Arai, Norihisa ^a   Arai, Fumitaka ^a   Hatakeyama, Kazuo ^a   Hazama, Hiroaki ^a   Saito, Masanobu ^a   Meguro, Hisataka ^a   Conley, Kevin ^b   Quader, Khandker ^b   Chen, Jian J ^b  

^a TOSHIBA CORPORATION   (Japan)

^b SanDisk Corporation   (United States)

Author keywords

Flash memory; High speed programming; NAND flash memory; Write cache

Indexed keywords

CACHE MEMORY; CMOS INTEGRATED CIRCUITS; NAND CIRCUITS; TRANSISTORS;

HIGH SPEED PROGRAMMING; IN-SERIES CONNECTED MEMORY CELLS; WRITE CACHE;

FLASH MEMORY;

EID: 0036858243     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.802355     Document Type: Article

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