The role of water in the radiation response of wet and dry oxides

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 2085-2089

  Batyrev, Iskander G ^a   Fleetwood, Daniel M ^b   Schrimpf, Ronald D ^b   Pantelides, Sokrates T ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Dry oxides; First principle calculation; Interface traps; Passivation; Radiation response; Water absorption; Wet

Indexed keywords

CURING; DANGLING BONDS; PASSIVATION; RATE CONSTANTS;

DRY OXIDES; FIRST PRINCIPLE CALCULATION; INTERFACE TRAPS; RADIATION RESPONSE; WATER ABSORPTION; WET;

MOS DEVICES;

EID: 53349143707     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000841     Document Type: Conference Paper

References (24)

1. G. W. Hughes and G. W. Brucker, "Radiation hardened MOS technology," Solid State Technol., vol. 22, no. 7, pp. 70-76, 1979.
2. K. Naruke, M. Yoshida, K. Maeguchi, and H. Tango, "Radiation-induced interface states of poly-Si gate MOS capacitors using low temperature gate oxidation," IEEE Trans. Nucl. Sci., vol. NS-30, no. 6, pp. 4054-4058, Dec. 1983.
3. P. V. Dressendorfer, "Radiation-hardening technology," in Radiation Effects in MOS Devices and Circuits, T-P. Ma and P. V. Dressendorfer, Eds. New York: Wiley, 1989, pp. 333-400.
4. G. F. Derbenwick and B. L. Gregory, "Process optimization of radiation-hardened CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-22, no. 6, pp. 2151-2156, Dec. 1975.
5. P. S. Winokur, E. B. Errett, D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, "Optimizing and controlling the radiation hardness of a Si-gate CMOS process," IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, pp. 3954-3960, Dec. 1985.
6. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, G. L. Hash, and M. P. Connors, "Interface-trap buildup rates in wet and dry oxides," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 2244-2251, Dec. 1992.
7. M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, I. G. Batyrev, S. Wang, and S. T. Pantelides, "The effects of aging on MOS irradiation and annealing response," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2642-2648, Dec. 2005.
8. I. G. Batyrev, M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Effects of water on the aging and radiation response of MOS devices," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3629-3635, Dec. 2006.
9. 2 PECVD deposition through TEOS using attenuated total-reflection FTIR spectroscopy," J.. Vac. Sci. Technol. A, vol. 13, no. 5, pp. 2355-2367, 1995.
10. D. M. Fleetwood, "Hydrogen-related reliability issues for advanced microelectronics," Microelectron. Reliab., vol. 42, no. 9-11, pp. 1397-1403, 2002.
11. D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides, "Effects of device aging on microelectronics radiation response and reliability," Microelectron. Reliab., vol. 47, no. 7, pp. 1075-1085, 2007.
12. R. E. Stahlbush, R. K. Lawrence, H. L. Hughes, and N. S. Saks, "Annealing of total dose damage: Redistribution of interface state density on (100), (110), and (111) orientation silicon," IEEE Trans. Nucl. Sci., vol. NS-35, no. 6, pp. 1192-1196, Dec. 1988.
13. M. Pejovic and G. Ristic, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures," Solid State Electron., vol. 41, pp. 715-720, 1997.
14. G. Kresse and J. Furthmuller, "Efficient iterative schemes for ab-initio total-energy calculations using a plane-wave basis set," Phys. Rev. B, vol. 54, no. 16, pp. 11169-11186, 1996.
15. L. Tsetseris and S. T. Pantelides, "Migration, incorporation, and passivation reactions of molecular hydrogen at the Si-SiO2 interface," Phys. Rev. B, vol. 70, pp. 245320-1-245320-6, 2004.
16. H. Jónsson, G. Mills, and K. W. Jacobsen, "Nudged elastic band method for finding minimum energy paths of transitions," in Classical and Quantum Dynamics in Condensed Phase Simulations, B. J. Berne, G. Ciccotti, and D. F. Coker, Eds. Singapore: World Scientific, 1998, p. 385.
17. A. J. Moulson and J. P. Roberts, "Water in silica glass," Trans. Faraday Soc., vol. 52, pp. 1208-1216, 2006.
18. C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, "Theory of hydrogen diffusion and reactions in crystalline silicon," Phys. Rev. B., vol. 39, no. 14, pp. 10791-10808.
19. 2 interface," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2262-2268, Dec. 2000.
20. S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Effects of hydrogen motion on interface trap formation and annealing," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pt. 2, pp. 3158-3165, Dec. 2004.
21. 2 MOS structures," IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, pp. 1651-1657, Dec. 1980.
22. M. R. Shaneyfelt, J. R. Schwank, S. C. Witczak, D. M. Fleetwood, R. L. Pease, P. S. Winokur, L. C. Riewe, and G. L. Hash, "Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pt. 3, pp. 2539-2545, Dec. 2000.
23. X. J. Chen, H. J. Barnaby, B. Vermeire, K. Holbert, D. Wright, R. L. Pease, G. Dunham, D. Platteter, J. Seiler, S. McClure, and P. Adell, "Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pt. 1, pp. 1913-1919, Dec. 2007.
24. R. L. Pease, D. G. Platteter, G. W. Dunham, J. E. Seiler, P. C. Adell, H. J. Barnaby, and X. J. Chen, "The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pt. 1, pp. 2168-2173, Dec. 2007.