Imaging of Si nano-patterns embedded in SiO2 using scanning electron microscopy

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 257-260

  Nagase, M ^a   Kurihara, K ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; IMAGING TECHNIQUES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; SURFACE PROPERTIES;

OXIDE SURFACE; SECONDARY ELECTRON YIELD; SURFACE CONTRAST;

NANOSTRUCTURED MATERIALS;

EID: 0034206881     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00310-5     Document Type: Article

References (6)

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2. 2. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara and K. Murase, Tech. Dig. Int. Electron Devices Meet., 1998, 123.
3. 3. M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Murase and K. Kurihara, Microelectron. Eng., 41/42 (1998) 527.
4. 4. H. Seiler, Scanning Electron Microscopy, vol. 1 (1976) 9.
5. 5. J. Hejna, Scanning, 14 (1992) 256.
6. 6. A. Moniwa and T. Terasawa, Jpn. J. Appl. Phys. 37 (1998) 7032.