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Volumn 255, Issue 1, 2008, Pages 54-57

Vacancy profiles and clustering in light-ion-implanted GaN and ZnO

Author keywords

Gallium nitride (GaN); Hexagonal wurtzite structure; UV optoelectronics; Zinc oxide (ZnO)

Indexed keywords

GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LITHIUM COMPOUNDS; VACANCIES; ZINC OXIDE; ZINC SULFIDE;

EID: 53049101734     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.172     Document Type: Article
Times cited : (13)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.