Defect studies in electron-irradiated ZnO and GaN

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 604-608

  Tuomisto, F ^a   Look, D C ^b,c   Farlow, G C ^b  

^a AALTO UNIVERSITY   (Finland)

^b WRIGHT STATE UNIVERSITY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN; Positron annihilation; Vacancy defects; ZnO

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; GALLIUM NITRIDE; POSITIVE IONS; POSITRON ANNIHILATION SPECTROSCOPY;

ISOCHRONAL THERMAL ANNEALINGS; ROOM-TEMPERATURE; VACANCY DEFECTS;

ZINC OXIDE;

EID: 36048957558     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.032     Document Type: Article

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