A compact model for SiGe HBT on thin-film SOI

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 296-303

  Frégonèse, Sébastien ^a   Avenier, G ^a,b   Maneux, C ^a   Chantre, A ^b   Zimmer, T ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Bipolar transistor; Compact model; Heterojunction bipolar transistor (HBT); Thin film silicon on insulator (SOI); Transit time

Indexed keywords

FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; PHYSICS; SEMICONDUCTOR JUNCTIONS; THIN FILMS; TRANSIT TIME DEVICES;

BASE-COLLECTOR JUNCTION CAPACITANCE; COMPACT MODEL; NONCONVENTIONAL CHARGE BEHAVIOR;

SILICON ON INSULATOR TECHNOLOGY;

EID: 31744451580     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862237     Document Type: Article

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