Intersubband absorption of strain-compensated Si 1-xGe x valence-band quantum wells with 0.7≤x≤0.85

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Fromherz, T ^a   Meduna M ^a,c   Bauer, G ^a   Borak, A ^b   Falub, C V ^b   Tsujino, S ^b   Sigg, H ^b   Grutzmacher D ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c MASARYK UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; IN-PLANE DISPERSION; INTERSUBBAND TRANSITION MATRIX ELEMENTS;

ABSORPTION; GERMANIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; POLARIZATION; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON COMPOUNDS;

EID: 25144473470     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1997292     Document Type: Article

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