Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 617-624

  Horio, Kazushige ^a   Wakabayashi, Akira ^a   Yamada, Tomiko ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRAPS; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THRESHOLD VOLTAGE;

SUBSTRATE-TRAP EFFECTS;

MESFET DEVICES;

EID: 0033884179     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824738     Document Type: Article

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