Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Choi, Hyejung ^a   Jung, Seung Jae ^a   Park, Hokyung ^a   Lee, Joon Myung ^a   Kwon, Moonjae ^a   Chang, Man ^a   Hasan, Musarrat ^a   Choi, Sangmoo ^a,b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRON TRAPS; NANOCRYSTALS; NONVOLATILE STORAGE; PHASE SEPARATION; TANTALUM COMPOUNDS;

CHARGE-TRAPPING LAYER; CONTROL SAMPLE; NONVOLATILE MEMORY APPLICATIONS;

SILICON NITRIDE;

EID: 34547659276     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2760181     Document Type: Article

References (16)

1. Y. Yang, A. Purwar, and M. H. White, Solid-State Electron. 43, 2025 (1999).
2. H. I. Hanafi, S. T. Tiwari, and I. Khan, IEEE Trans. Electron Devices 43, 1553 (1996).
3. M. Rosmeulen, E. Sleeckx, and K. D. Meyer, Tech. Dig. - Int. Electron Devices Meet. 2002, 189.
4. S. Choi, H. Yang, M. Chang, S. Baek, H. Hwang, S. Jeon, J. Kim, and C. Kim, Appl. Phys. Lett. 86, 251901 (2005).
5. C. Lee, T.-H. Hou, and E. C.-C. Kan, IEEE Trans. Electron Devices 52, 2697 (2005).
6. K. H. Joo, X. Wang, J. H. Han, S. H. Lim, S. J. Baik, Y. W. Cha, J. W. Lee, I. S. Yeo, Y. K. Cha, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, Tech. Dig. - Int. Electron Devices Meet. 2005, 885.
7. M. S. Angyal, Y. Shacham-Diamand, J. S. Reid, and M.-A. Nicolet, Appl. Phys. Lett. 67, 2152 (1995).
8. J. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B.-Y. Nguyen, B. E. White, J. S. Dakshina-Murthy, R. S. Rai, Z.-X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. B 21, 11 (2003).
9. M. Bicker, C.-U. Pinnow, U. Geyer, S. Schneider, and M. Seibt, Appl. Phys. Lett. 78, 3618 (2001).
10. C. Ren, B. B. Faizhal, D. S. H. Chan, M.-F. Li, Y.-C. Yeo, A. D. Trigg, N. Balasubramanian, and D.-L. Kwong, Thin Solid Films 504, 174 (2006).
11. R. S. Johnson, J. G. Hong, C. Hinkle, and G. Lucovsky, Solid-State Electron. 46, 1799 (2002).
12. Y.-S. Suh, G. P. Heuss, V. Misra, D. G. Park, and K.-Y. Lim, J. Electrochem. Soc. 150, F79 (2003).
13. D. Briggs and J. C. Riviere, Practical Surface Analysis (Wiley, New York, 1990), Vol. 1, p. 50.
14. Y. Liu, S. Song, D. Mao, H. Ling, and M. Li, Microelectron. Eng. 75, 309 (2004).
15. Scientific Group Thermodata Europe (SGTE), Thermodynamic Properties of Inorganic Materials. edited by, P. Franke, and, D. Neuschutz, (Springer, Berlin, 2006), Vol. 19B4, p. 45.
16. Y. Yang and M. H. White, Solid-State Electron. 44, 949 (2000).