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Electrochemical and Solid-State Letters

Volumn 11, Issue 4, 2008, Pages

The influence of Si content on the work function of W1-xSi x (x ≤ 14 atom %) gate electrodes

(2) Lin, C M a Chen, J S a,b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LATTICE CONSTANTS; SEMICONDUCTOR DEVICES; TUNGSTEN COMPOUNDS;

ANNEALING TREATMENT; GATE ELECTRODES; MATERIAL CHARACTERISTICS; METAL-OXIDE; SEMICONDUCTOR CAPACITORS;

SILICON;

EID: 39349101215 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2839444 Document Type: Article

Times cited : (3)

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