SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 10, 2007, Pages

Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/ SiO2 interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); IMPURITIES; NICKEL COMPOUNDS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

EFFECTIVE WORK FUNCTION (EFF); IMPURITY CONCENTRATION; IMPURITY SEGREGATION;

INTERFACES (MATERIALS);

EID: 36749099503 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2817257 Document Type: Article

Times cited : (7)

References (11)

1
- 12344313329
- 0018-9383 10.1109/TED.2004.841264
- J. Kedzierski, D. Boyd, C. Cabral, Jr., P. Ronsheim, S. Zafer, P. M. Kozlowski, J. A. Ott, and M. Ieong, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2004.841264 52, 39 (2005).
- (2005) IEEE Trans. Electron Devices , vol.52 , pp. 39
- Kedzierski, J.¹ Boyd, D.² Cabral Jr., C.³ Ronsheim, P.⁴ Zafer, S.⁵ Kozlowski, P.M.⁶ Ott, J.A.⁷ Ieong, M.⁸

2
- 0036923595
- Z. Krivokapic, W. Maszara, K. Achutan, P. King, J. Gray, M. Sidorow, E. Zhao, J. Zhang, J. Chan, A. Marathe, and M. -R. Lin, Tech. Dig.-Int. Electron Devices Meet., 2002, p. 271.
- (2002) Tech. Dig.-Int. Electron Devices Meet. , pp. 271
- Krivokapic, Z.¹ Maszara, W.² Achutan, K.³ King, P.⁴ Gray, J.⁵ Sidorow, M.⁶ Zhao, E.⁷ Zhang, J.⁸ Chan, J.⁹ Marathe, A.¹⁰ Lin, M.R.¹¹

4
- 36749090829
- P. Ranade, T. Ghani, K. Kuhn, K. Mistry, S. Pae, L. Shifren, M. Stettler, K. Tone, S. Tyagi, and M. Bohr, Tech. Dig.-Int. Electron Devices Meet., 2005, p. 227.
- (2005) Tech. Dig.-Int. Electron Devices Meet. , pp. 227
- Ranade, P.¹ Ghani, T.² Kuhn, K.³ Mistry, K.⁴ Pae, S.⁵ Shifren, L.⁶ Stettler, M.⁷ Tone, K.⁸ Tyagi, S.⁹ Bohr, M.¹⁰

5
- 33646907668
- 0021-4922
- K. Manabe, K. Takahashi, T. Hase, N. Ikarashi, M. Oshida, T. Tatsumi, H. Watanabe, H. Watanabe, and K. Yasutake, Jpn. J. Appl. Phys. 45, 2919 (2006). 0021-4922
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 2919
- Manabe, K.¹ Takahashi, K.² Hase, T.³ Ikarashi, N.⁴ Oshida, M.⁵ Tatsumi, T.⁶ Watanabe, H.⁷ Watanabe, H.⁸ Yasutake, K.⁹

6
- 36749015905
- Extended Abstracts of the International Conference on Solid State Devices and Materials, SSDM'06
- A. Ohta, H. Yoshinaga, H. Murakami, D. Azuma, Y. Munetaka, S. Higashi, S. Miyazaki, T. Aoyama, K. Kosaka, and K. Shibahara, Extended Abstracts of the International Conference on Solid State Devices and Materials, SSDM'06, p. 216.
- Ohta, A.¹ Yoshinaga, H.² Murakami, H.³ Azuma, D.⁴ Munetaka, Y.⁵ Higashi, S.⁶ Miyazaki, S.⁷ Aoyama, T.⁸ Kosaka, K.⁹ Shibahara, K.¹⁰

7
- 36749017178
- K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, and Y. Mochizuki, Tech. Dig.-Int. Electron Devices Meet., 2004, p. 367.
- Tech. Dig.-Int. Electron Devices Meet., 2004 , pp. 367
- Takahashi, K.¹ Manabe, K.² Ikarashi, T.³ Ikarashi, N.⁴ Hase, T.⁵ Yoshihara, T.⁶ Watanabe, H.⁷ Tatsumi, T.⁸ Mochizuki, Y.⁹

8
- 33645465482
- 0741-3106 10.1109/LED.2005.861404
- J. A. Kittl, M. A. Pawlak, A. Lauwers, C. Demeurisse, K. Opsomer, K. G. Anil, C. Vrancken, M. J. H. van Dal, A. Veloso, S. Kubicek, P. Absil, K. Maex, and S. Biesemans, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2005.861404 27, 34 (2006).
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 34
- Kittl, J.A.¹ Pawlak, M.A.² Lauwers, A.³ Demeurisse, C.⁴ Opsomer, K.⁵ Anil, K.G.⁶ Vrancken, C.⁷ Van Dal, M.J.H.⁸ Veloso, A.⁹ Kubicek, S.¹⁰ Absil, P.¹¹ Maex, K.¹² Biesemans, S.¹³

9
- 0017556846
- 0021-8979 10.1063/1.323539
- H. B. Michaelson, J. Appl. Phys. 0021-8979 10.1063/1.323539 48, 4729 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 4729
- Michaelson, H.B.¹

10
- 0031996507
- 0254-0584 10.1016/S0254-0584(98)80014-X
- J. P. Gambino and E. G. Colgan, Mater. Chem. Phys. 0254-0584 10.1016/S0254-0584(98)80014-X 52, 99 (1998).
- (1998) Mater. Chem. Phys. , vol.52 , pp. 99
- Gambino, J.P.¹ Colgan, E.G.²

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