Effect of negatively charged species on the growth behavior of silicon films in hot wire chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 5122-5126

  Song, Jean Ho ^a   Pak, Sang Hoon ^b   Hwang, Nong Moon ^c,d   Kim, Hyun Jae ^b  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University   (South Korea)

^c National Research Laboratory of Charged Nanoparticles   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

Biased voltage; Hot wire; Negative current; Silicon; Surface roughness; Thickness

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COULOMB INTERACTIONS; FILM GROWTH; GAS MIXTURES; SILICON; SURFACE ROUGHNESS;

BIASED VOLTAGE; HOT WIRES; NEGATIVE CURRENT;

THIN FILMS;

EID: 42649138531     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.02.019     Document Type: Article

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