Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 46-49, 2005, Pages

  Ikeda, Shoji ^a   Hayakawa, Jun ^a,b   Lee, Young Min ^a   Sasaki, Ryutaro ^a   Meguro, Toshiyasu ^a   Matsukura, Fumihiro ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

CoFeB; MgO barrier; Resistance; Sputtering pressure; Tunnel magnetoresistance

Indexed keywords

ANNEALING; ARGON; MAGNESIA; MAGNETORESISTANCE; SPUTTER DEPOSITION; SPUTTERING; TUNNEL DIODES;

MGO BARRIER; SMOOTH SURFACE; SPUTTERING PRESSURE; TUNNEL MAGNETORESISTANCE;

SEMICONDUCTOR JUNCTIONS;

EID: 31844455224     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1442     Document Type: Article

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