Molecular beam epitaxy of semiconductor (BaSi 2 )/metal (CoSi 2 ) hybrid structures on Si(1 1 1) substrates for photovoltaic application

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7963-7967

  Ichikawa, Y ^a   Kobayashi, M ^a   Sasase, M ^b   Suemasu, T ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

BaSi 2; CoSi 2; Interface; Molecular beam epitaxy; Semiconducting silicide

Indexed keywords

BARIUM COMPOUNDS; COBALT COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON; SILICIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BASI2; COSI2; EPITAXIALLY GROWN; HYBRID STRUCTURE; PHOTOVOLTAIC APPLICATIONS; SI (1 1 1); TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51249103202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.011     Document Type: Article

References (19)

1. Bost M.C., and Mahan J.E. J. Appl. Phys. 58 (1985) 2696
2. Morita K., Inomata Y., and Suemasu T. Thin Solid Films 508 (2006) 363
3. Migas D.B., Shaposhnikov V.L., and Borisenko V.E. Phys. Stat. Sol. B 244 (2007) 2611
4. Ojima K., Yoshimura M., and Ueda K. Jpn. J. Appl. Phys. 41 (2002) 4965
5. Nakamura T., Suemasu T., Takakura K., and Hasegawa F. Appl. Phys. Lett. 81 (2002) 1032
6. Morita K., Inomata Y., and Suemasu T. Jpn. J. Appl. Phys. 45 (2006) L390
7. Morita K., Kobayashi M., and Suemasu T. Thin Solid Films 515 (2007) 8216
8. Suemasu T., Morita K., and Kobayashi M. J. Cryst. Growth 301/302 (2007) 680
9. Suemasu T., Morita K., Kobayashi M., Saida M., and Sasaki M. Jpn. J. Appl. Phys. 45 (2006) L519
10. Pirri C., Peruchetti J.C., Bolmont D., and Gewinner G. Phys. Rev. B 33 (1986) 4108
11. Mackee R.A., Walker F.J., Conner J.R., and Specht E.D. Appl. Phys. Lett. 59 (1991) 782
12. Mackee R.A., Walker F.J., Conner J.R., and Raj R. Appl. Phys. Lett. 63 (1993) 2818
13. Inomata Y., Nakamura T., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) 4155
14. Inomata Y., Suemasu T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L478
15. Inomata Y., Suemasu T., Izawa T., and Hasegawa F. Jpn. J. Appl. Phys. 43 (2004) L771
16. Miyao M., Nakagawa K., Nakamura N., and Ohshima T. J. Cryst. Growth 111 (1991) 957
17. Tung R.T., Batstone J.L., and Yalisove S.M. J. Electrochem. Soc. 136 (1989) 815
18. Suemasu T., Sasase M., Ichikawa Y., Kobayashi M., and Tsukada D. J. Cryst. Growth 310 (2008) 1250
19. Tung R.T. J. Vac. Sci. Technol. A 7 (1989) 598