The electronic structure and transmission characteristics of disordered AlGaAs nanowires

IEEE Transactions on Nanotechnology

Volumn 6, Issue 1, 2007, Pages 43-47

  Boykin, Timothy B ^a,b   Luisier, Mathieu ^c   Schenk, Andreas ^c   Kharche, Neerav ^d   Klimeck, Gerhard ^d,e  

^a IEEE   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^c ETH ZURICH   (Switzerland)

^d PURDUE UNIVERSITY   (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Nanotechnology; Quantum effect semiconductor devices; Quantum wires

Indexed keywords

CAPTURE DISORDER; QUANTUM EFFECT SEMICONDUCTOR DEVICES; VIRTUAL-CRYSTAL APPROXIMATION (VCA);

BAND STRUCTURE; ELECTRONIC STRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM WIRES;

NANOSTRUCTURED MATERIALS;

EID: 33846586386     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.886776     Document Type: Article

References (27)

1. L. C. Lew Yan Voon, B. Lassen, R. Melnik, and S. Willatzen, "Prediction of barrier localization in modulated nanowires," J. Appl. Phys., vol. 96, no. 8, pp. 4660-4662, 2004.
2. L. C. Lew Yan Voon and S. Willatzen, "Electron states in modulated nanowires," J. Appl. Phys., vol. 93, no. 12, pp. 9997-10000, 2003.
3. S. Jaziri and R. Ferreira, "Excitonic states of weakly confining quantum wires," J. Appl. Phys., vol. 84, no. 2, pp. 893-900, 1998.
4. M. Tsetseri and G. P. Tribera, "Mobility in V-shaped quantum wires due to interface roughness and alloy scattering," Phys. Rev. B, vol. 69, no. 7, 2004, art. 075313.
5. H. T. Johnson, L. B. Freund, C. D. Akyuz, and A. Zaslavsky, "Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires," J. Appl. Phys., vol. 84, no. 7, pp. 3714-3725, 1998.
6. A. Francheschetti and A. Zunger, "Quantum-confinement induced Γ-X transition in GaAs quantum films, wires, and dots," Phys. Rev. B, vol. 52, no. 20, pp. 14 664-14 670, 1995.
7. S. Pescetelli, A. Di Carlo, and P. Lugli, "Conduction-band mixing in T- and V-shaped quantum wires," Phys. Rev. B, vol. 56, no. 4, pp. R1668-R1671, 1997.
8. A. Di Carlo, S. Pescetelli, A. Kavokin, M. Vladimirva, and P. Lugli, "Off-resonance Γ -X mixing in semiconductor quantum wires," Phys. Rev. B, vol. 57, no. 16, pp. 9770-9779, 1998.
9. M. P. Persson and H. Q. Xu, "Giant polarization anisotropy in optical transitions of free-standing InP nanowires," Phys. Rev. B, vol. 70, no. 16, 2004, art. 161310(R).
10. Y.-J. Ko, M. Shin, S. Lee, and K. W. Park, "Effects of atomistic defects on coherent electron transport in Si nanowires: Full band calculations," J. Appl. Phys., vol. 89, no. 1, pp. 374-379, 2001.
11. x As quantum wires grown by strain-induced lateral ordering," J. Appl. Phys., vol. 84, no. 11, pp. 6162-6169, 1998.
12. xAs self-assembled quantum wires with varying interfacial strain relaxation," J. Appl. Phys., vol. 89, no. 4, pp. 2251-2260, 2001.
13. B. Koiller, A. S. Martins, and H. Chacham, "Optical effects of inter-diffusion in GaAs/AlAs heterostructures: Atomic scale calculations," Appl. Phys. Lett., vol. 69, no. 16, pp. 2423-2425, 1996.
14. T. G. Dagram, R. B. Capaz, and B. Koiller, "Disorder and size effects in the envelope-function approximation," Phys. Rev. B., vol. 56, no. 15, pp. 9625-9629, 1997.
15. B. Koiller, R. B. Capaz, and H. Chacham, "Segregation, interface morphology, and the optical properties of GaAs/AlAs quantum wells: A theoretical study," Phys. Rev. B., vol. 60, no. 3, pp. 1787-1791, 1999.
16. 0.5As asymmetric quantum wire," Phys. Rev. B., vol. 61, no. 12, pp. 8306-8311, 2000.
17. G. Klimeck, F. Oyafuso, T. B. Boykin, R. C. Bowen, and P. von Allmen, "Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots," Comput. Modeling Eng. Sci. (CMES), vol. 3, no. 5, pp. 601-642, 2002.
18. R. C. Bowen, G. R. Klimeck, W. R. Frensley, and T. Moise, "Quantitative simulation of a resonant tunneling diode," J. Appl. Phys., vol. 81, no. 7, pp. 3207-3213, 1997.
19. G. Klimeck, R. K. Lake, R. C. Bowen, W. R. Frensley, and T. Moise, "Quantum device simulation with a generalized tunneling formula," Appl. Phys. Lett., vol. 67, no. 17, pp. 2539-2541, 1995.
20. 5 s* tight-binding calculation for cubic semiconductors: General method and material parameters," Phys. Rev. B, vol. 57, no. 11, pp. 6493-6507, 1998.
21. T. B. Boykin, N. Kharche, G. Klimeck, and M. Korkusinski, "Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations," J. Phys. Condens. Matter, to be published.
22. S. Lee, F. Oyafuso, P. von Allmen, and G. Klimeck, "Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures," Phys. Rev. B, vol. 69, no. 4, 2004, art. 045316.
23. T. B. Boykin and G. Klimeck, "Practical application of zone-folding concepts in tight-binding calculations," Phys. Rev. B, vol. 70, no. 11, 2005, art. 115215.
24. 5s* tight-binding formalism: From boundary conditions to strain calculations," Phys. Rev. B, vol. 74, 2006, art. 205323.
25. S. J. Lee, H. S. Chung, K. Nahm, and C. K. Kim, "Band structure of ternary-compound semiconductors using a modified tight-binding method," Phys. Rev. B, vol. 42, no. 2, pp. 1452-1454, 1990.
26. 3s* band structures," Mater. Sci. Eng., vol. B41, pp. 304-309, 1996.
27. M. Luisier, unpublished.